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Proceedings Paper

Pattern freezing process free litho-litho-etch double patterning
Author(s): Tomoyuki Ando; Masaru Takeshita; Ryoich Takasu; Yasuhiro Yoshii; Jun Iwashita; Shogo Matsumaru; Sho Abe; Takeshi Iwai
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Paper Abstract

Double patterning based on existing ArF immersion lithography is considered the most viable option for 32nm and below CMOS node. Most of double patterning approaches previously described require intermediate process steps like as hard mask etching, spacer material deposition, and resist freezing. These additional steps can significantly add to the cost of production applied the double patterning. In this paper, pattern freezing free litho-litho-etch double patterning process is investigated to achieve a narrow pitch imaging without the intermediate processing steps. Pattern freezing free litho-litho-etch double patterning utilizing positive-positive resist combination demonstrated composite pattern generation.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 71402H (4 December 2008); doi: 10.1117/12.804710
Show Author Affiliations
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masaru Takeshita, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Ryoich Takasu, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yasuhiro Yoshii, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Jun Iwashita, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shogo Matsumaru, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Sho Abe, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takeshi Iwai, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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