Share Email Print

Proceedings Paper

Development of EUV lithography tools at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Hiroshi Chiba; Kazushi Nomura; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo; Takaharu Miura
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Full-field EUV exposure tool named EUV1 integrated and exposure experiments were started with the numerical aperture of the projection optics of 0.25 and conventional partial illumination with coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm line-and-space patterns were resolved. In scanning exposure, 32nm line-and-space patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified depend on the flare evaluation using Kirk test. Metal oxide capping layer and oxygen injection method were developed for the contamination control in EUV exposure tools. High-NA projection optics design is also reviewed.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401C (4 December 2008); doi: 10.1117/12.804706
Show Author Affiliations
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Hiroshi Chiba, Nikon Corp. (Japan)
Kazushi Nomura, Nikon Corp. (Japan)
Hidemi Kawai, Nikon Corp. (Japan)
Yoshiaki Kohama, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Yukiharu Ohkubo, Nikon Corp. (Japan)
Takaharu Miura, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top