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Proceedings Paper

High Si content BARC for applications in dual BARC systems such as tri-layer patterning
Author(s): Joseph Kennedy; Song-Yuan Xie; Ze-Yu Wu; Ron Katsanes; Kyle Flanigan; Kevin Lee; Mark Slezak; Nicolette Fender; Junichi Takahashi
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Paper Abstract

This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for trilayer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selected to produce a film that meets the requirements as a middle layer for trilayer patterning and gives us a level of flexibility to adjust the properties of the film to meet the customer's specific photoresist and patterning requirements. Results of simulations of the substrate reflectance versus numerical aperture, UVAS thickness, and under layer film are presented. Immersion lithographic patterning of ArF photoresist line space and contact hole features will be presented. A sequence of SEM images detailing the plasma etch transfer of line space photoresist features through the middle and under layer films comprising the TLP film stack will presented. Excellent etch selectivity between the UVAS and the organic under layer film exists as no edge erosion or faceting is observed as a result of the etch process. The results of simulations of Rsub versus NA, and the thickness of each film comprising a two layer antireflective film stack will also be discussed.

Paper Details

Date Published: 4 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71402S (4 December 2008); doi: 10.1117/12.804699
Show Author Affiliations
Joseph Kennedy, Honeywell Co., Ltd. (United States)
Song-Yuan Xie, Honeywell Co., Ltd. (United States)
Ze-Yu Wu, Honeywell Co., Ltd. (United States)
Ron Katsanes, Honeywell Co., Ltd. (United States)
Kyle Flanigan, Honeywell Co., Ltd. (United States)
Kevin Lee, Honeywell Co., Ltd. (Taiwan)
Mark Slezak, JSR Micro, Inc. (United States)
Nicolette Fender, JSR Micro, Inc. (United States)
Junichi Takahashi, JSR Inc. (Taiwan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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