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Proceedings Paper

A methodology for double patterning compliant split and design
Author(s): Vincent Wiaux; Staf Verhaegen; Fumio Iwamoto; Mireille Maenhoudt; Takashi Matsuda; Sergei Postnikov; Geert Vandenberghe
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Paper Abstract

Double Patterning allows to further extend the use of water immersion lithography at its maximum numerical aperture NA=1.35. Splitting of design layers to recombine through Double Patterning (DP) enables an effective resolution enhancement. Single polygons may need to be split up (cut) depending on the pattern density and its 2D content. The split polygons recombine at the so-called 'stitching points'. These stitching points may affect the yield due to the sensitivity to process variations. We describe a methodology to ensure a robust double patterning by identifying proper split- and design- guidelines. Using simulations and experimental data, we discuss in particular metal1 first interconnect layers of random LOGIC and DRAM applications at 45nm half-pitch (hp) and 32nm hp where DP may become the only timely patterning solution.

Paper Details

Date Published: 4 December 2008
PDF: 14 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401X (4 December 2008); doi: 10.1117/12.804697
Show Author Affiliations
Vincent Wiaux, IMEC (Belgium)
Staf Verhaegen, IMEC (Belgium)
Fumio Iwamoto, Panasonic (Japan)
Mireille Maenhoudt, IMEC (Belgium)
Takashi Matsuda, Panasonic (Japan)
Sergei Postnikov, Infineon (Germany)
Geert Vandenberghe, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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