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Proceedings Paper

Use of spin-on-hard mask materials for nano scale patterning technology
Author(s): Wen-Hao Wu; Edward Y. Chang; Hwan-Sung Cheon; Sang Kyun Kim; Hyeon Mo Cho; Kyong-Ho Yoon; Jong Seob Kim; Tuwon Chang; Seongho Shin
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Paper Abstract

Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On-Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask ) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.

Paper Details

Date Published: 4 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71402Q (4 December 2008); doi: 10.1117/12.804695
Show Author Affiliations
Wen-Hao Wu, National Chiao Tung Univ. (Taiwan)
Edward Y. Chang, National Chiao Tung Univ. (Taiwan)
Hwan-Sung Cheon, Samsung Cheil Industries, Inc. (Korea, Republic of)
Sang Kyun Kim, Samsung Cheil Industries, Inc. (Korea, Republic of)
Hyeon Mo Cho, Samsung Cheil Industries, Inc. (Korea, Republic of)
Kyong-Ho Yoon, Samsung Cheil Industries, Inc. (Korea, Republic of)
Jong Seob Kim, Samsung Cheil Industries, Inc. (Korea, Republic of)
Tuwon Chang, Samsung Cheil Industries, Inc. (Korea, Republic of)
Seongho Shin, Samsung Cheil Industries, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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