Share Email Print
cover

Proceedings Paper

Development of multi-layer process materials for hyper-NA lithography process
Author(s): Yasushi Sakaida; Makoto Nakajima; Tetsuya Shinjo; Keisuke Hashimoto
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In order to achieve miniaturization of the device, and still following device design rules, the photo-resist film thickness has decreased. The thinner photo-resist thickness will improve the resolution limit and prevent the pattern collapse issue. In order to solve these problems a multilayer process is used that has several advantages over previous process designs: reflectivity control in hyper-NA lithography process, decreasing LWR, and the viewpoint of lithographic process margin. The multilayer process consists of three layers: layer one is patterned photo-resist, the second layer is Si-ARC (Si contented Anti Reflective Coatings), and the third layer is SOC (Spin on Carbon) also known as underlayer. There are two processes to deposit Si-ARC and SOC, the first is by spin coating with either a track or spin coater, the second is with a Chemical Vapor Deposition (CVD). From a cost of ownership standpoint the spin on process is better. In the development of spin on Si-ARC and SOC materials it is important to consider the resist profile and the shelf life stabilities. Another important attribute to consider is the etching characteristics of the material. For the Si-ARC the main attribute when determining etch rate is the Si content and for the SOC material the main attribute is the C content in the material. One problem with the spin on multilayer process is resist profile and this paper will examine this problem along with the characteristics of developed material is described.

Paper Details

Date Published: 4 December 2008
PDF: 9 pages
Proc. SPIE 7140, Lithography Asia 2008, 71403Z (4 December 2008); doi: 10.1117/12.804688
Show Author Affiliations
Yasushi Sakaida, Nissan Chemical Industries, Ltd. (Japan)
Makoto Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Tetsuya Shinjo, Nissan Chemical Industries, Ltd. (Japan)
Keisuke Hashimoto, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top