Share Email Print
cover

Proceedings Paper

Methodology of flare modeling and compensation in EUVL
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Flare in EUV mirror optics has been reported to be very high and long range effect due to its character which is inversely proportional to the 4th order of wavelength. The high level of flare will generate CD (Critical Dimension) variation problem in the area where the gradient of aerial pattern density is large while the long range influencing character would confront an issue of computational challenge either for OPC (Optical Proximity Correction) modeling or for any other practical ways to accommodate such a long range effect. There also exists another substantial challenge of measuring and characterizing such a long range flare accurately enough so that the characterized flare can successfully be used for the compensation in the standard OPC flow.

Paper Details

Date Published: 4 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 714009 (4 December 2008); doi: 10.1117/12.804673
Show Author Affiliations
Insung Kim, SAMSUNG Electronics Co., Ltd. (South Korea)
Hoyoung Kang, ASML (South Korea)
Changmin Park, SAMSUNG Electronics Co., Ltd. (South Korea)
Joo-On Park, SAMSUNG Electronics Co., Ltd. (South Korea)
Jeonghoon Lee, SAMSUNG Electronics Co., Ltd. (South Korea)
Jinhong Park, SAMSUNG Electronics Co., Ltd. (South Korea)
Doohoon Goo, SAMSUNG Electronics Co., Ltd. (South Korea)
Jeongho Yeo, SAMSUNG Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, SAMSUNG Electronics Co., Ltd. (South Korea)
Woosung Han, SAMSUNG Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top