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Proceedings Paper

Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography
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Paper Abstract

Reflectivity comparison study of bottom anti reflectivity coating (BARC) was investigated at 30nm node devices with same gate width at different pitch sizes. The goal of this study is to elucidate the practical target of reflectivity for high NA immersion lithography especially focusing on the changes in the CD variation. Using double patterning technology (DPT) and single patterning technology (SPT) patterns in high NA systems, we studied the impact of reflectivity to the lithography performance for various ARC thicknesses. A strong dependence of n, k values (of BARC and substrate) on reflectivity was confirmed by simulation. Standing wave effects were investigated by vertical profiles inspection and changes in lithographic performances. Finally, we investigated the critical dimension uniformity (CDU), and line width roughness (LWR) variations for various reflectivities using hard mask substrates. Our experimental and simulation results clearly show that a 0.1% reflectivity target is highly recommendable for the sub-30 nm device process using high NA immersion lithography.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 714032 (4 December 2008); doi: 10.1117/12.804671
Show Author Affiliations
Yun-kyeong Jang, SAMSUNG Electronics Co., Ltd. (South Korea)
So-ra Han, SAMSUNG Electronics Co., Ltd. (South Korea)
Hyoung-hee kim, SAMSUNG Electronics Co., Ltd. (South Korea)
Jin-Young Yoon, SAMSUNG Electronics Co., Ltd. (South Korea)
Shi-yong Lee, SAMSUNG Electronics Co., Ltd. (South Korea)
Kwang-sub Yoon, SAMSUNG Electronics Co., Ltd. (South Korea)
Seok-hwan Oh, SAMSUNG Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, SAMSUNG Electronics Co., Ltd. (South Korea)
Woo-Sung Han, SAMSUNG Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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