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Proceedings Paper

Experimental proximity matching of ArF scanners
Author(s): Joost Bekaert; L. Van Look; P. De Bisschop; J. Van de Kerkhove; G, Vandenberghe; K. Schreel; J. Menger; G. Schiffelers; E. Knols; H. van der Laan; R. Willekers
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Paper Abstract

IC manufacturers have a strong demand for transferring a working process from one scanner to another. In an ideal transfer, a reticle set that produces devices within specification on a certain scanner has the same performance on another exposure tool. In real life, however, reticles employ optical proximity correction (OPC) which incorporates by definition the inherent optical fingerprint of a specific exposure tool and process. In order to avoid the additional cost of developing a new OPC model and acquiring a new reticle for each exposure tool, IC manufacturers therefore wish to 'match' the optical fingerprint of their scanners as closely as possible. In this paper, we report on the matching strategy that we developed to perform a tool-to-tool matching. We present experimental matching results for several tool combinations at numerical apertures (NA) 0.75, 0.85 and 1.2. Matching of exposure tools is obtained by determining the sensitivities to scanner parameter variations like NA, Sigma, Focus Drilling, Ellipticity and Dose from wafer data and/or simulations. These sensitivities are used to calculate the optimal scanner parameters for matching the two tools.

Paper Details

Date Published: 4 December 2008
PDF: 11 pages
Proc. SPIE 7140, Lithography Asia 2008, 714027 (4 December 2008); doi: 10.1117/12.804670
Show Author Affiliations
Joost Bekaert, IMEC vzw (Belgium)
L. Van Look, IMEC vzw (Belgium)
P. De Bisschop, IMEC vzw (Belgium)
J. Van de Kerkhove, IMEC vzw (Belgium)
G, Vandenberghe, IMEC vzw (Belgium)
K. Schreel, ASML (Netherlands)
J. Menger, ASML (Netherlands)
G. Schiffelers, ASML (Netherlands)
E. Knols, ASML (Netherlands)
H. van der Laan, ASML (Netherlands)
R. Willekers, ASML (Netherlands)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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