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Proceedings Paper

Current benchmarking results of EUV resist at Selete
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Paper Abstract

The main challenge facing the implementation of EUV resist and processing has been concurrent achievement of high sensitivity, high resolution, and low line width roughness (LWR). In order to improve the performance of EUV resist, Selete is actively pursuing its benchmarking. The results from this benchmarking were found to be as follows: Esize improved with the increasing capability of EUV pattern exposure. Sensitivity improved during this year. Resolution is found to be almost sufficient for 32-nm half-pitch (hp), but not quite good enough for 22-nm hp. Resist blur of the resist, which marked good score in benchmarking, is found to be 10nm to 11nm. LWR is still far from its target value.

Paper Details

Date Published: 4 December 2008
PDF: 9 pages
Proc. SPIE 7140, Lithography Asia 2008, 714008 (4 December 2008); doi: 10.1117/12.804665
Show Author Affiliations
Daisuke Kawamura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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