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Proceedings Paper

Developing loading effect on lithography I-line process
Author(s): Thomas Huang; Walter Wang; Chun-Yen Huang; Nick Tseng; Ting-Jhen Guo; Chiang-Lin Shih; Wen-Bin Wu
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Paper Abstract

With recently semiconductor manufacturers Critical Dimension shrink down to 70nm and beyond, I-line layer CD would approach to it's resolution limitation. CD uniformity controling will be strongly influenced by developing process. Regarding I-line layer developing process, CD uniformity is always varying with various developing parameters setting (as nozzle design, developing time, pulse spin, etc).

Paper Details

Date Published: 4 December 2008
PDF: 7 pages
Proc. SPIE 7140, Lithography Asia 2008, 71403J (4 December 2008); doi: 10.1117/12.804659
Show Author Affiliations
Thomas Huang, Nanya Technologies Corp. (Taiwan)
Walter Wang, Nanya Technologies Corp. (Taiwan)
Chun-Yen Huang, Nanya Technologies Corp. (Taiwan)
Nick Tseng, Nanya Technologies Corp. (Taiwan)
Ting-Jhen Guo, Nanya Technologies Corp. (Taiwan)
Chiang-Lin Shih, Nanya Technologies Corp. (Taiwan)
Wen-Bin Wu, Nanya Technologies Corp. (Taiwan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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