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Proceedings Paper

An imaging system for extended ArF immersion lithography
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Paper Abstract

The k1 factor continues to be driven downwards, even beyond its theoretical limit 0.25 in order to enable the 32 nm feature generation and beyond. Due to the extremely small process window that will be available for such extremely demanding imaging challenges, it is necessary that each unit contributing to the imaging system be driven to its ultimate performance capability. The units in such an integrated imaging system include the projection lens, illumination optics, in-situ metrology tooling, reticle stage control, and wafer stage control. In this paper we are going to discuss the required functions especially for projection lens and illumination system and how to optimally control each unit in cooperation with the others in order to achieve the goal of 32 nm patterning and beyond.

Paper Details

Date Published: 4 December 2008
PDF: 7 pages
Proc. SPIE 7140, Lithography Asia 2008, 714013 (4 December 2008); doi: 10.1117/12.804658
Show Author Affiliations
Tomoyuki Matsuyama, Nikon Corp. (Japan)
Yasuhiro Ohmura, Nikon Corp. (Japan)
Toshiharu Nakashima, Nikon Corp. (Japan)
Yusaku Uehara, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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