Proceedings Paper
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Paper Abstract
Historically, in a volume production environment, process induced variation in optical property (n&k) of film stack was
not significant for the most of applications using scatterometry. Many papers presented before addressed the CD variation
in the production by adopting the fixed optical property approach [1-8]. However, with shrinkage of device size, and
introduction of new material and process, n&k variation of some critical layers can not be ignored. In this paper, it presents
impacts on measured optical CD due to n&k variation of one critical film in a 70nm DRAM ArF lithography process at a
patterned area (A-layer). A solution to minimize the impacts using floating n&k in the scatterometry model is discussed,
developed and verified.
Paper Details
Date Published: 1 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400G (1 December 2008); doi: 10.1117/12.804636
Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400G (1 December 2008); doi: 10.1117/12.804636
Show Author Affiliations
Marlene Strobl, Inotera Memories Inc. (Taiwan)
Lisa Huang, Inotera Memories Inc. (Taiwan)
Allen Li, Tokyo Electron Taiwan Ltd. (Taiwan)
Lisa Huang, Inotera Memories Inc. (Taiwan)
Allen Li, Tokyo Electron Taiwan Ltd. (Taiwan)
Ying Luo, Timbre Technology, Inc. (United States)
Youxian Wen, Timbre Technology, Inc. (United States)
Youxian Wen, Timbre Technology, Inc. (United States)
Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)
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