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Proceedings Paper

Effective solution to reticle haze formation at 193nm lithography
Author(s): Wen-Jui Tseng; Shean-Hwan Chiou; Ming-Chien Chiu; Po-shin Lee
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Paper Abstract

Various studies have been published on the formation and prevention of reticle haze; however, yield loss due to reticle haze is still an issue for most of the IC makers. For a mass production IC manufacturing fab, an easy and practical solution is needed to prevent haze generation. In this study, we focus on the solution, which can be easily implemented inside production fab and does not require a total implementation of specific type of gas or equipment. A reticle carrier with purging function combining with the use of a purge station for purging and storage is used. After implementing this solution in a 12" DRAM fabrication facility, the number of wafers printed without haze development on reticles protected by this solution can be up to 150,000 wafers, and this is great achievement in help ramping up the production and also maintain high yield. This solution has been proven to be effective in reducing the generation of haze.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401V (4 December 2008); doi: 10.1117/12.804629
Show Author Affiliations
Wen-Jui Tseng, Rexchip Electronics Corp. (Taiwan)
Shean-Hwan Chiou, Rexchip Electronics Corp. (Taiwan)
Ming-Chien Chiu, Gudeng Precision Industrial Co., Ltd. (Taiwan)
Po-shin Lee, Gudeng Precision Industrial Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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