Share Email Print
cover

Proceedings Paper

Bottom anti-reflective coating for hyper NA process: theory, application and material development
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

To obtain high resolution lithography in semiconductor industry for 45 nm node and beyond, 193 nm immersion lithography is a state-of-the-art technology. The hyper NA process in immersion technology requires unique design of bottom antireflective coating (BARC) materials to control reflectivity and improve lithography performance. Based on simulations, high n low k materials are suitable for BARC applications in hyper NA process. This paper describes the principle of the material development of high n low k BARC materials and its applications in hyper NA lithography process. The BARC material contains a dye with absorbance maximum lower than the exposure wavelength, e.g 170-190 nm. The enhancement of n values due to anomalous dispersion was illustrated by dispersion curves of new BARC materials. The relationship of the optical indices of BARC materials at 193 nm with the absorption properties of dyes was investigated. The novel high n low k materials have shown excellent lithography performances under dry and immersion conditions.

Paper Details

Date Published: 4 December 2008
PDF: 9 pages
Proc. SPIE 7140, Lithography Asia 2008, 71402X (4 December 2008); doi: 10.1117/12.804617
Show Author Affiliations
Huirong Yao, AZ Electronic Materials US Corp. (United States)
JoonYeon Cho, AZ Electronic Materials US Corp. (United States)
Jian Yin, AZ Electronic Materials US Corp. (United States)
Salem Mullen, AZ Electronic Materials US Corp. (United States)
Guanyang Lin, AZ Electronic Materials US Corp. (United States)
Mark Neisser, AZ Electronic Materials US Corp. (United States)
Ralph Dammel, AZ Electronic Materials US Corp. (United States)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top