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Proceedings Paper

Electron spin resonance spectroscopy investigation of ion beam sputtered HfO2 and SiO2 thin films
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Paper Abstract

In this work we use electron spin resonance (ESR) spectroscopy to investigate defects in dual ion beam sputtered HfO2 and SiO2 films. "As-grown" SiO2 films exhibit an ESR feature consistent with an E' center associated with an oxygen vacancy previously reported. A similar feature with axial symmetry is seen in HfO2 films. The defect giving rise to the HfO2 ESR feature is distributed throughout the film. In addition, post process annealing of HfO2 and SiO2 films greatly reduces these defects.

Paper Details

Date Published: 30 December 2008
PDF: 5 pages
Proc. SPIE 7132, Laser-Induced Damage in Optical Materials: 2008, 71320M (30 December 2008); doi: 10.1117/12.804459
Show Author Affiliations
B. Langdon, Colorado State Univ. (United States)
D. Patel, Colorado State Univ. (United States)
E. Krous, Colorado State Univ. (United States)
P. Langston, Colorado State Univ. (United States)
C. S. Menoni, Colorado State Univ. (United States)
Michelle Shinn, Jefferson Lab. (United States)


Published in SPIE Proceedings Vol. 7132:
Laser-Induced Damage in Optical Materials: 2008
Gregory J. Exarhos; Detlev Ristau; M. J. Soileau; Christopher J. Stolz, Editor(s)

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