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Proceedings Paper

About one problem of the identification of parameters direct gap semiconductors on dependencies of the intensities of monochromatic cathodoluminescence from electron beam energy
Author(s): A. N. Polyakov; Yu. E. Gagarin; N. N. Miheev; E. N. Lapshinova; M. A. Stepovich
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Paper Abstract

The problem of identification of parameters direct gap semiconductors is considered at use of dependence of intensity monochromatic cathodoluminescence from electron beam energy and realization of low level of excitation of a signal. It is shown, that realization of a method of the least squares leads to system of the nonlinear algebraic equations which decision essentially depends on a choice of initial approach. Taking into account it some conditions of correct processing of experimental data for identification of required parameters of semiconductors are defined.

Paper Details

Date Published: 5 June 2008
PDF: 10 pages
Proc. SPIE 7121, Eighth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 71210G (5 June 2008); doi: 10.1117/12.804424
Show Author Affiliations
A. N. Polyakov, Tsiolkovsky Kaluga State Pedagogical Univ. (Russia)
Yu. E. Gagarin, Bauman Moscow State Technical Univ. (Russia)
N. N. Miheev, A.V. Shubnikov Institute of Crystallography (Russia)
E. N. Lapshinova, Tsiolkovsky Kaluga State Pedagogical Univ. (Russia)
M. A. Stepovich, Tsiolkovsky Kaluga State Pedagogical Univ. (Russia)


Published in SPIE Proceedings Vol. 7121:
Eighth Seminar on Problems of Theoretical and Applied Electron and Ion Optics

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