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Proceedings Paper

High performance blue light-emitting diodes on patterned Si substrate
Author(s): Zhanguo Li; Guojun Liu; Minghui You; Lin Li; Mei Li; Baoshun Zhang; Xiaohua Wang
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Paper Abstract

High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDs fabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNx interlayers grown at high temperatures were also employed to partially release the residual stress and to further improve the crystalline quality. 300 µm square blue LEDs fabricated on the islands, without thinning and package, exhibited a high output power of around 0.68 mW at a drive current of 20 mA.

Paper Details

Date Published: 18 November 2008
PDF: 4 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713544 (18 November 2008); doi: 10.1117/12.804061
Show Author Affiliations
Zhanguo Li, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)
Minghui You, Changchun Univ. of Science and Technology (China)
Lin Li, Changchun Univ. of Science and Technology (China)
Mei Li, Changchun Univ. of Science and Technology (China)
Baoshun Zhang, Changchun Univ. of Science and Technology (China)
Xiaohua Wang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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