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Proceedings Paper

Correction for surface charge induced beam displacement in large area sub-45 nm patterning with FIB lithography
Author(s): Max Chung; Hung-Yi Lin; Jen-Hui Tsai
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Paper Abstract

Focused Ion Beam (FIB) lithography not only can produce features on photoresist, it can also be used to manufacture mold for Nanoimprint. FIB provides fast results with a well focused minimum 7 nm diameter Ga+ ion beam, and making mold for Nanoimprint with FIB immunes oneself from photoresist issues involved in sub-45 nm large area patterning. However, due to surface charge accumulation, large area patterning often results in displaced and overlapped patterns, similar to e-beam lithography. This displacement occurs in area as small as 5 µm2, and is a function of beam dwell time and ion current dose. A small dwell time can lessen this displacement to certain degree if the pattern is small, but fails when the area to be pattern is large. In this paper we present a correct scheme in which the ion beam is check periodically against a pre-drilled mark for beam displacement, and made adjustment in beam control correspondently. In this manner, a large area (10 µm2) pattern of 50 nm squares is successfully demonstrated on a Si wafer.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 71403D (4 December 2008); doi: 10.1117/12.803835
Show Author Affiliations
Max Chung, Southern Taiwan Univ. (Taiwan)
National Cheng Kung Univ. (Taiwan)
Hung-Yi Lin, Industrial Technology Research Institute (Taiwan)
Jen-Hui Tsai, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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