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Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance
Author(s): Fu-Sheng Chu; Shean-Hwan Chiou
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Paper Abstract

Haze occurrence is time-dependent, also known as degradation Haze. Thereby optimum time of purge operation became a significant reference index of mask operation for Haze resistance in fabrication. In advanced study, a concept of mask Q-time ("Q-time" is abbreviated from Queue time) was conducted to analyze the optimization of purge operation. TLV ("TLV" is abbreviated from Threshold Limit Value) of Q-time is a novel review index, a crucial index for Haze prevention and control originated in a new analysis method that have never published. Mask Q-time analysis method includes two analytic models, one of models is HDB ("HDB" is abbreviated from Haze Detonation Baseline) for the analysis of optimum purge operation in Haze defect resistance before Haze occurrence, HDB was defined by the ratio of wafer accumulation over the TLV of HDB (wafer/wafer) and the ratio of wafer dispersion over the TLV of HDB (frequency/frequency). The other analytic model, HGB ("HGB" is abbreviated from Haze Growth Baseline) for the analysis of optimum collocation of absorbent adsorption and purge operation in Haze defect growth control after Haze occurrence, HGB was defined by two factors, the ratio of wafer exposure(min/min) and the ratio of mask purge operation(min/min).

Paper Details

Date Published: 4 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71403F (4 December 2008); doi: 10.1117/12.803784
Show Author Affiliations
Fu-Sheng Chu, Rexchip Electronics Corp. (Taiwan)
Shean-Hwan Chiou, Rexchip Electronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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