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Proceedings Paper

Temperature characteristics of several familiar diode lasers with broad area
Author(s): Xuemei Liang; Li Qin; Chunfeng He; Qiang Ma; Yongqiang Ning; Lijun Wang
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Paper Abstract

Temperature characteristics of several familiar high power diode lasers with broad area, whose wavelength was separately 808 nm, 810 nm, 940 nm and 980 nm, were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures, different structures were attempted. For the 808 nm structure, we tried different barrier thicknesses. For the 810 nm structure, different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper, the widths of these devices were all 100 μm. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713543 (18 November 2008); doi: 10.1117/12.803712
Show Author Affiliations
Xuemei Liang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chunfeng He, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Qiang Ma, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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