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Proceedings Paper

High power 1064nm laser diode array and measuring chip temperature based on emitting spectra
Author(s): Xiangpeng Wang; Zaijin Li; Yun Liu; Ye Wang; Di Yao; Lijun Wang
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Paper Abstract

High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle, the average driving power in the laser chip is quite low, so the heating effect cemiconductor laser is very small, using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/ K

Paper Details

Date Published: 18 November 2008
PDF: 6 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713541 (18 November 2008); doi: 10.1117/12.803585
Show Author Affiliations
Xiangpeng Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Zaijin Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Ye Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Di Yao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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