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Proceedings Paper

Improvement in metrology on new 3D-AFM platform
Author(s): Ingo Schmitz; Marc Osborn; Sean Hand; Qi Chen
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Paper Abstract

According to the 2007 edition of the ITRS roadmap, the requirement for CD uniformity of isolated lines on a binary or attenuated phase shift mask is 2.1nm (3σ) in 2008 and requires improvement to1.3 nm (3σ) in 2010. In order to meet the increasing demand for CD uniformity on photo masks, improved CD metrology is required. A next generation AFM, InSightTM 3DAFM, has been developed to meet these increased requirements for advanced photo mask metrology. The new system achieves 2X improvement in CD and depth precision on advanced photo masks features over the previous generation 3D-AFM. This paper provides measurement data including depth, CD, and sidewall angle metrology. In addition the unique capabilities of damage-free defect inspection and Nanoimprint characterization by 3D AFM are presented.

Paper Details

Date Published: 17 October 2008
PDF: 11 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222X (17 October 2008); doi: 10.1117/12.803581
Show Author Affiliations
Ingo Schmitz, Veeco Metrology (United States)
Marc Osborn, Veeco Metrology (United States)
Sean Hand, Veeco Metrology (United States)
Qi Chen, Veeco Metrology (United States)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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