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Proceedings Paper

Optical properties of protocrystalline silicon/amorphous SiC multilayer films
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Paper Abstract

Protocrystalline silicon/amorphous SiC multilayer films were fabricated by helicon wave plasma enhanced chemical vapour deposition (HW-PECVD). Atom force microscopy, Raman scattering and optical absorption measurements were used to analyze the microstructure and optical properties of the multilayer films. Experiment analyses reveal that through inserting transient a-SiC layer into film depositing process, well-controlled pc-Si:H films have been obtained in the growth condition of the μc-Si:H. The optical gap is observed being tuned from 2.15 to 2.43 eV by varying single pc-Si:H layer thickness. Such multilayer structure should have potential application in constructing high efficiency and stable Si-based solar cells.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713540 (18 November 2008); doi: 10.1117/12.803517
Show Author Affiliations
Guangsheng Fu, Hebei Univ. (China)
Luo Ma, Hebei Univ. (China)
Wanbing Lu, Hebei Univ. (China)
Zicai Zhang, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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