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Proceedings Paper

Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAs/AlAsSb quantum wells
Author(s): H. Ishikawa; R. Akimoto; G. W. Cong; M. Nagase; T. Mozume; C. G. Lim; S. Gozu; T. Hasama
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Paper Abstract

Ultrafast all-optical switch based on intersubband transitions in InGaAs/AlAs/AlAsSb quantum well is described. Because of very fast intra-band relaxation in conduction band, we can obtain very fast response of around 1ps. The operation principles and characteristics as an absorption saturation type device are described. Also described is the operation as an all-optical phase modulator. With Mach-Zehnder interferometer configuration, error free all-optical demultiplexing operation from 160-Gb/s to 40-Gb/s was achieved.

Paper Details

Date Published: 18 November 2008
PDF: 11 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350X (18 November 2008); doi: 10.1117/12.803444
Show Author Affiliations
H. Ishikawa, National Institute of Advanced Industrial Science and Technology (Japan)
R. Akimoto, National Institute of Advanced Industrial Science and Technology (Japan)
G. W. Cong, National Institute of Advanced Industrial Science and Technology (Japan)
M. Nagase, National Institute of Advanced Industrial Science and Technology (Japan)
T. Mozume, National Institute of Advanced Industrial Science and Technology (Japan)
C. G. Lim, National Institute of Advanced Industrial Science and Technology (Japan)
S. Gozu, National Institute of Advanced Industrial Science and Technology (Japan)
T. Hasama, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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