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Proceedings Paper

AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm
Author(s): S. C. Huang; H. L. Chang; K. W. Su; Y. F. Chen; K. F. Huang
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Paper Abstract

We report the use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351T (18 November 2008); doi: 10.1117/12.803422
Show Author Affiliations
S. C. Huang, National Chiao Tung Univ. (Taiwan)
H. L. Chang, National Chiao Tung Univ. (Taiwan)
K. W. Su, National Chiao Tung Univ. (Taiwan)
Y. F. Chen, National Chiao Tung Univ. (Taiwan)
K. F. Huang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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