Share Email Print

Proceedings Paper

Growth of AlN single crystals by modified PVT
Author(s): Honglei Wu; Ruisheng Zheng; Shu Meng; Yuan Guo
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Growth of AlN single crystals is achieved by physical vapor transport (PVT) in the reverse cone tungsten crucible, which is induction-heated, for obtaining proper sublimation rate and ensuring effective heat and mass transport. In the experiment, there is a little hole at the center of crucible lid where the temperature is lower than the periphery, and there is a tungsten cover on the lid. A self-seeded AlN single crystal is grown due to the anisotropic growth property of AlN crystals and limitation of the hole. During the following growth, the crystal as a seed becomes a large size and high quality single crystal. By modified PVT, separate AlN single crystals with diameters of larger than 2mm on the crucible lid have been obtained successfully for the first time.

Paper Details

Date Published: 18 November 2008
PDF: 7 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350H (18 November 2008); doi: 10.1117/12.803357
Show Author Affiliations
Honglei Wu, Shenzhen Univ. (China)
Ruisheng Zheng, Shenzhen Univ. (China)
Shu Meng, Shenzhen Univ. (China)
Yuan Guo, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

© SPIE. Terms of Use
Back to Top