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Proceedings Paper

808nm high-power high-efficiency GaAsP/GaInP laser bars
Author(s): Ye Wang; Ye Yang; Li Qin; Chao Wang; Di Yao; Yun Liu; Lijun Wang
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Paper Abstract

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71350N (18 November 2008); doi: 10.1117/12.803301
Show Author Affiliations
Ye Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Ye Yang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li Qin, Graduate School of the Chinese Academy of Sciences (China)
Chao Wang, Graduate School of the Chinese Academy of Sciences (China)
Di Yao, Graduate School of the Chinese Academy of Sciences (China)
Yun Liu, Graduate School of the Chinese Academy of Sciences (China)
Lijun Wang, Graduate School of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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