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Proceedings Paper

Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar
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Paper Abstract

In this paper, dry etching of In0.8Al0.2As/In0.8Ga0.2As/In1-xAlxAs (In1-x-yAlxGayAs) epitaxy material was studied in BCl3/Cl2/Ar inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCl3/Cl2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in Cl2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCl3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

Paper Details

Date Published: 18 November 2008
PDF: 7 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353I (18 November 2008); doi: 10.1117/12.803196
Show Author Affiliations
Jinhua Ning, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Kefeng Zhang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Yang Wang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Hai-mei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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