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Proceedings Paper

The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon
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Paper Abstract

Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers, the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were increased.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351N (18 November 2008); doi: 10.1117/12.803095
Show Author Affiliations
Xiao-yi Lü, Xi'an Jiaotong Univ. (China)
Tao Xue, Xinjiang Univ. (China)
Zhen-hong Jia, Xinjiang Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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