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Proceedings Paper

Compact optical modulator based on carrier induced gain of an InP/InGaAsP micro-disk cavity integrated on SOI
Author(s): Liu Liu; Joris Van Campenhout; Günther Roelkens; Richard Soref; Dries Van Thourhout; Pedro Rojo-Romeo; Philippe Regreny; Christian Seassal; Jean-Marc Fédéli; Roel Baets
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Paper Abstract

A compact electro-optic modulator on silicon-on-insulator is presented. The structure consists of a III-V microdisk cavity heterogeneously integrated on a silicon-on-insulator wire waveguide. By modulating the loss of the active layer included in the cavity through carrier injection, the power of the transmitted light at the resonant wavelength is modulated. ~10 dB extinction ratio and 2.73 Gbps dynamic operation are demonstrated without using any special driving techniques. The results are consistent with the theoretical simulations.

Paper Details

Date Published: 18 November 2008
PDF: 8 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351I (18 November 2008); doi: 10.1117/12.803085
Show Author Affiliations
Liu Liu, Ghent Univ. (Belgium)
Joris Van Campenhout, Ghent Univ. (Belgium)
Günther Roelkens, Ghent Univ. (Belgium)
Richard Soref, Air Force Research Lab. (United States)
Dries Van Thourhout, Ghent Univ. (Belgium)
Pedro Rojo-Romeo, Univ. de Lyon, Institut des Nanotechnolgies de Lyon, CNRS (France)
Philippe Regreny, Univ. de Lyon, Institut des Nanotechnolgies de Lyon, CNRS (France)
Christian Seassal, Univ. de Lyon, Institut des Nanotechnolgies de Lyon, CNRS (France)
Jean-Marc Fédéli, CEA Léti-Minatec (France)
Roel Baets, Ghent Univ. (Belgium)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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