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Proceedings Paper

Deposition of nanocrystalline SiC films using helicon wave plasma enhanced chemical vapor deposition
Author(s): Wanbing Lu; Wei Yu; Luo Ma; Liping Wu; Guangsheng Fu
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Paper Abstract

Hydrogenated nanocrystalline SiC films have been deposited by using helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) in H2, SiH4 and CH4 gas mixtures at different RF powers. Their structural and optical properties have been investigated by Fourier transform infrared absorption (FTIR), atomic force microscopy (AFM) and ultraviolet-visible (UV-VIS) transmission spectra. The results indicate that RF power has an important influence on properties of the deposited films. It is found that in a 300 °C low substrate temperature, only amorphous SiC can be deposited at the radio frequency (RF) power of lower than 400 W, while nanocrystalline SiC can be grown at the RF power of equal to or higher than 400 W. The analyses show that the high plasma density of helicon wave plasma source and the high hydrogen dilution condition are two key factors for depositing nanocrystalline SiC films at a low temperature.

Paper Details

Date Published: 18 November 2008
PDF: 9 pages
Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353F (18 November 2008); doi: 10.1117/12.803081
Show Author Affiliations
Wanbing Lu, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
Luo Ma, Hebei Univ. (China)
Liping Wu, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 7135:
Optoelectronic Materials and Devices III
Yi Luo; Jens Buus; Fumio Koyama; Yu-Hwa Lo, Editor(s)

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