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Proceedings Paper

AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications
Author(s): B. H. Chu; B. S. Kang; H. T. Wang; C. Y. Chang; T, Lele; Y. Tseng; A. Goh; A. Sciullo; W. S. Wu; J. N. Lin; B. P. Gila; S. J. Pearton; J. W. Johnson; E. L. Piner; K. J. Linthicum; F. Ren
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Paper Abstract

Chemical sensors can be used to analyze a wide variety of environmental and biological gases and liquids and may need to be able to selectively detect a target analyte. Different methods, including gas chromatography (GC), chemiluminescence, selected ion flow tube (SIFT), and mass spectroscopy (MS) have been used to measure biomarkers. These methods show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor. A promising sensing technology utilizes AlGaN/GaN high electron mobility transistors (HEMTs). HEMT structures have been developed for use in microwave power amplifiers due to their high two dimensional electron gas (2DEG) mobility and saturation velocity. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMT sensors can be used for detecting gases, ions, pH values, proteins, and DNA. In this paper we review recent progress on functionalizing the surface of HEMTs for specific detection of glucose, kidney marker injury molecules, prostate cancer and other common substances of interest in the biomedical field.

Paper Details

Date Published: 19 February 2009
PDF: 10 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162A (19 February 2009); doi: 10.1117/12.802823
Show Author Affiliations
B. H. Chu, Univ. of Florida (United States)
B. S. Kang, Univ. of Florida (United States)
H. T. Wang, Univ. of Florida (United States)
C. Y. Chang, Univ. of Florida (United States)
T, Lele, Univ. of Florida (United States)
Y. Tseng, Univ. of Florida (United States)
A. Goh, Univ. of Florida (United States)
A. Sciullo, Univ. of Florida (United States)
W. S. Wu, Univ. of Florida (United States)
J. N. Lin, Univ. of Florida (United States)
B. P. Gila, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)
J. W. Johnson, Nitronex Corp. (United States)
E. L. Piner, Nitronex Corp. (United States)
K. J. Linthicum, Nitronex Corp. (United States)
F. Ren, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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