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Proceedings Paper

Nitride laser diode arrays
Author(s): K. Holc; M. Leszczynski; T. Suski; R. Czernecki; H. Braun; U. Schwartz; P. Perlin
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Paper Abstract

One of the most desired features of the semiconductor blue/near UV laser diodes (LDs) is the possibility to obtain high output powers from the devices. This can be realized by means of multi emitter structures. We demonstrate the construction of violet blue multi-quantum-well (MQW) InGaN/GaN laser mini - bars, yet quite novel system in nitride-based devices. It consists of three laser stripes (3 μm wide), closely spaced with 40 μm pitch. The structures were fabricated on high pressure grown, low dislocation density substrates. Under cw operation the measured spectra demonstrate sharp, almost single line emission (FWHM around 1.43 Å at λ = 406 nm). Measurements of the optical far field pattern revealed that when operated below threshold the device was emitting light from all three stripes, whereas during lasing we observed the optical mode only in the area of the middle laser stripe. The behavior of optical mode suggests the formation of the so called supermode (coherent emission from all three devices) which was observed also in case of structures fabricated with wider ridges (of 7 μm with 20 μm pitch).

Paper Details

Date Published: 16 February 2009
PDF: 7 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721618 (16 February 2009); doi: 10.1117/12.802758
Show Author Affiliations
K. Holc, Institute of High Pressure Physics Unipress (Poland)
TopGaN Ltd. (Poland)
M. Leszczynski, Institute of High Pressure Physics Unipress (Poland)
TopGaN Ltd. (Poland)
T. Suski, Institute of High Pressure Physics Unipress (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
H. Braun, Regensburg Univ. (Germany)
U. Schwartz, Regensburg Univ. (Germany)
P. Perlin, Institute of High Pressure Physics Unipress (Poland)
TopGaN Ltd. (Poland)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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