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Proceedings Paper

Modeling of powerful GaAs MESFET
Author(s): A. Shestakov; A. Myasnikov; K. Zhuravlev
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Paper Abstract

In this paper modeling of powerful GaAs Metal Semiconductor Field Effect Transistor (MESFET) was carried out, I-V characteristics with breakdown voltage of MESFET were obtained. With the help of this model optimal characteristics of structure for power MESFET were determined. Recommendations for value of Schottky barrier were proposed. Also breakdown voltage was calculated. More over temperature dependencies of I-V characteristics of MESFET were studied.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251N (29 April 2008); doi: 10.1117/12.802535
Show Author Affiliations
A. Shestakov, Institute of Semiconductor Physics (Russia)
A. Myasnikov, Institute of Semiconductor Physics (Russia)
K. Zhuravlev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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