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Proceedings Paper

All-quantum simulation of an ultra-small SOI MOSFET
Author(s): V. Vyurkov; I. Semenikhin; V. Lukichev; A. Burenkov; A. Orlikovsky
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Paper Abstract

The all-quantum program for 3D simulation of an ultra-thin body SOI MOSFET is overviewed. It is based on Landauer-Buttiker approach to calculate current. The necessary transmission coefficients are acquired from the self-consistent solution of Schrodinger equation. The latter is stabilized with the help of expanding the wave function over the modes of transversal quantization inside the transistor channel. The program also contains a domain for one-dimensional classical ballistics intended for calculation of the initial state for subsequent all-quantum simulation. This is a significant point of our approach as the straightforward procedure of the self-consistent solution of Schrodinger equation from the very beginning is diverging or, at least, extremely time-consuming. The main goal of all-quantum simulation is to clarify the impact of interference on charged impurities and quantum reflection from self-consistent potential on I-V curve reproducibility for different randomly doped transistors in a circuit. The 10nm technology node tri-gate (wrapped channel) structure with 2nm silicon body was used in simulation. 20 discrete impurities were dispersed by the source and drain contacts to imitate the same doping. The most important feature we demonstrate is a smoothness of I-V curves in spite of beforehand apprehension. The next peculiarity we came across was that the current spanned within 10% for different discrete impurity realizations. These results manifest that the reproducibility of nanotransistors could be fairly good to make ultra-large integrated circuits still feasible. We have also made a comparison with simulations based on drift-diffusion model.

Paper Details

Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251K (29 April 2008); doi: 10.1117/12.802532
Show Author Affiliations
V. Vyurkov, Institute of Physics and Technology (Russia)
I. Semenikhin, Institute of Physics and Technology (Russia)
V. Lukichev, Institute of Physics and Technology (Russia)
A. Burenkov, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
A. Orlikovsky, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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