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Proceedings Paper

Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Author(s): A. Burenkov; C. Kampen; J. Lorenz; H. Ryssel
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Paper Abstract

Coupled process and device simulation has been applied to investigate the physical processes which determine the performance and scaling properties of fully depleted thin-silicon-body SOI based (FD-SOI) NMOS transistors at gate lengths of 40 nm and below. A comparison of simulation results with measurements of electrical characteristics of the FD-SOI NMOS transistors showed that the electrical performance of such transistors can only be reproduced by simulation, if contact resistances, ballistic electron transport, quantum mechanical depletion of the electrons near the gate dielectric, and mechanical stress are accounted for. The mechanical stress in thin-silicon-body SOI transistors is simulated as a result of two silicidation processes: the source/drain contact CoSi2 silicidation and NiSi gate silicidation. The resulting stress in the silicon channel at the end of processing is tensile along the gate length, non-uniform and reaches maximum values in excess of 1GPa. The simulations show that mechanical stress as well as the contact resistances increase for scaled FD-SOI transistors, therefore a careful optimization of mechanical stress and an engineering of contact resistances are mandatory for scaled FD-SOI devices.

Paper Details

Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251J (29 April 2008); doi: 10.1117/12.802504
Show Author Affiliations
A. Burenkov, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
C. Kampen, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
J. Lorenz, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
H. Ryssel, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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