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Proceedings Paper

Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor
Author(s): R. D. Tikhonov
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Paper Abstract

The dual collector lateral bipolar magnetotransistor manufactured in the well with an external connection of contacts to the well and substrate has been investigated. Modern methods of device-technological simulation have been used to model the distribution of charge carriers, current densities, and recombination velocity. It is shown that bipolar magnetotransistor in the well have negative relative magnetic sensitivity due to the volumetric recombination mechanism.

Paper Details

Date Published: 29 April 2008
PDF: 11 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251B (29 April 2008); doi: 10.1117/12.802486
Show Author Affiliations
R. D. Tikhonov, SMC Technological Ctr. MIEE (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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