Proceedings PaperSign magnetosensitivity of dual-collector lateral bipolar magnetotransistor
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The dual collector lateral bipolar magnetotransistor manufactured in the well with an external connection of contacts to the well and substrate has been investigated. Modern methods of device-technological simulation have been used to model the distribution of charge carriers, current densities, and recombination velocity. It is shown that bipolar magnetotransistor in the well have negative relative magnetic sensitivity due to the volumetric recombination mechanism.