The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient ∇T gives rise to relative shift of non-isothermal concentration profiles, corresponding two opposite signs of this gradient. The value of the shift increases with increasing the value of ∇T and nonlinearly depends on the time durations of annealing process. It was established too, the dopant diffusion coefficient increases with increasing the ∇T in the vertical direction in the wafer regardless of ∇T sign. The estimation of thermodiffusion parameters was made. The coefficient of mass transfer of intrinsic non-equilibrium defects was introduced into the phenomenological equations of irreversible thermodynamics to explain anomalous high values of heat of transport. This coefficient allows for influence of generation-recombination processes related to intrinsic non-equilibrium defects on the dopant diffusion. The experimentally observed high values of diffusion coefficients and heat of transport are explained using this coefficient.

Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702519 (29 April 2008); doi: 10.1117/12.802484

Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007