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Features of evolution of implanted profiles during RTA in non-isothermal reactorFormat | Member Price | Non-Member Price |
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Paper Abstract
The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was
established, applied temperature gradient ∇T gives rise to relative shift of non-isothermal concentration profiles,
corresponding two opposite signs of this gradient. The value of the shift increases with increasing the value of ∇T and
nonlinearly depends on the time durations of annealing process. It was established too, the dopant diffusion coefficient
increases with increasing the ∇T in the vertical direction in the wafer regardless of ∇T sign. The estimation of
thermodiffusion parameters was made. The coefficient of mass transfer of intrinsic non-equilibrium defects was
introduced into the phenomenological equations of irreversible thermodynamics to explain anomalous high values of
heat of transport. This coefficient allows for influence of generation-recombination processes related to intrinsic non-equilibrium
defects on the dopant diffusion. The experimentally observed high values of diffusion coefficients and heat
of transport are explained using this coefficient.
Paper Details
Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702519 (29 April 2008); doi: 10.1117/12.802484
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702519 (29 April 2008); doi: 10.1117/12.802484
Show Author Affiliations
Valery I. Rudakov, Institute of Physics and Technology (Russia)
Alexander A. Victorov, Institute of Physics and Technology (Russia)
Yuri I. Denisenko, Institute of Physics and Technology (Russia)
Alexander A. Victorov, Institute of Physics and Technology (Russia)
Yuri I. Denisenko, Institute of Physics and Technology (Russia)
Boris V. Mochalov, Institute of Physics and Technology (Russia)
Vladimir V. Ovcharov, Institute of Physics and Technology (Russia)
Vladimir V. Ovcharov, Institute of Physics and Technology (Russia)
Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)
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