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Proceedings Paper

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
Author(s): G. I. Zebrev; M. S. Gorbunov; V. S. Pershenkov
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Paper Abstract

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702517 (29 April 2008); doi: 10.1117/12.802480
Show Author Affiliations
G. I. Zebrev, Moscow Engineering Physics Institute (Russia)
M. S. Gorbunov, Moscow Engineering Physics Institute (Russia)
V. S. Pershenkov, Moscow Engineering Physics Institute (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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