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Proceedings Paper

Parasitic bipolar effect in modern SOI CMOS technologies
Author(s): V. E. Shunkov; M. S. Gorbunov; G. I. Zebrev; B. V. Vasilegin
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Paper Abstract

Parasitic bipolar effect can significantly decrease SEE tolerance of modern deep submicron bulk and SOI CMOS devices due to amplification of charge collected in interaction between silicon and single ionizing particles. This article is dedicated to studies of bipolar effect phenomenon in modern SOI CMOS technologies and to increasing SEE tolerance without technology modifications.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702516 (29 April 2008); doi: 10.1117/12.802479
Show Author Affiliations
V. E. Shunkov, Moscow Engineering Physical Institute (Russia)
Scientific Research Institute for System Studies (Russia)
M. S. Gorbunov, Moscow Engineering Physical Institute (Russia)
Scientific Research Institute for System Studies (Russia)
G. I. Zebrev, Moscow Engineering Physical Institute (Russia)
B. V. Vasilegin, Scientific Research Institute for System Studies (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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