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Proceedings Paper

Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiNx dielectrics
Author(s): Sofia A. Arzhannikova; Mikhail D. Efremov; Vladimir A. Volodin; Genadiy N. Kamaev; Denis V. Marin; Vladimir S. Shevchuk; Artem A. Vaschenkov; Sergey A. Kochubei; Alexander A. Popov; Yuri A. Minakov
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Paper Abstract

Characterisation of three-layer dielectric embedded into MDS-structure (Metal-Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing of differential capacitance, simultaneously, with variation of differential conductivity of MDS-structures was detected. In the light strong changing of capacitance part of impedance was firstly observed, demonstrating decreasing almost to zero values and restoring up to maximal values in narrow bands of voltage applied. Variation of capacitance exceeds significantly so called dielectric layer capacitance, what interpreted as carriers exchanging between substrate and electronic states in SiNx probably due to three-layered kind of its nature.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702513 (29 April 2008); doi: 10.1117/12.802459
Show Author Affiliations
Sofia A. Arzhannikova, Institute of Semiconductor Physics (Russia)
Mikhail D. Efremov, Institute of Semiconductor Physics (Russia)
Vladimir A. Volodin, Institute of Semiconductor Physics (Russia)
Genadiy N. Kamaev, Institute of Semiconductor Physics (Russia)
Denis V. Marin, Institute of Semiconductor Physics (Russia)
Vladimir S. Shevchuk, Institute of Semiconductor Physics (Russia)
Artem A. Vaschenkov, Institute of Semiconductor Physics (Russia)
Sergey A. Kochubei, Institute of Semiconductor Physics (Russia)
Alexander A. Popov, Institute of Microelectronics and Informatics (Russia)
Yuri A. Minakov, Institute of Microelectronics and Informatics (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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