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Proceedings Paper

Nanorelief elements in reference measures for scanning electron microscopy
Author(s): Yu. A. Novikov; S. A. Darznek; M. N. Filippov; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua
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Paper Abstract

The single elements of relief (protrusions and steps) fabricated by anisotropic etching of the surface of the silicon wafer congruent the crystallographic plane (100) in the scanning electron microscope have been studied. The image registration in the low energy secondary electron collection mode was carried out, and the influence of the probe electron energy and its diameter on the microscope signal formation by relief elements scanning was studied. The electron beam energy varied at the range of 0.3 - 20 keV, the probe diameter changed in the limits of 14 - 500 nm. The widths of upper bases of protrusions varied within 14 - 500 nm. The correlation analysis of experimental results, carried out by the authors, demonstrate high quality of the structures studied.

Paper Details

Date Published: 29 April 2008
PDF: 10 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702511 (29 April 2008); doi: 10.1117/12.802428
Show Author Affiliations
Yu. A. Novikov, A.M. Prokhorov General Physics Institute (Russia)
S. A. Darznek, Ctr. for Surface and Vacuum Research (Russia)
M. N. Filippov, N.S. Kurnakov Institute of General and Inorganic Chemistry (Russia)
V. B. Mityukhlyaev, Ctr. for Surface and Vacuum Research (Russia)
A. V. Rakov, A.M. Prokhorov General Physics Institute (Russia)
P. A. Todua, Ctr. for Surface and Vacuum Research (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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