Share Email Print
cover

Proceedings Paper

Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation
Author(s): D. G. Drozdov; I. A. Khorin; V. B. Kopylov; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Zirconium oxide (ZrO2) films have been deposited on cleaned and heated p-type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO2 layer on ZrO2/Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si structures with 3÷20-nm-thick dielectric layers were formed by electron-beam evaporation technique. The fixed charge densities in 3-nm-thick YSZ layers are 3x1010 - 3.7x1010cm2, leakage current density at a voltage -1V achieves ~7,9•10-7Α/cm2.

Paper Details

Date Published: 29 April 2008
PDF: 9 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250Y (29 April 2008); doi: 10.1117/12.802425
Show Author Affiliations
D. G. Drozdov, Moscow State Institute of Radioengineering, Electronics and Automation (Russia)
I. A. Khorin, Institute of Physics and Technology (Russia)
Moscow State Institute of Radioengineering, Electronics and Automation (Russia)
V. B. Kopylov, Institute of Physics and Technology (Russia)
A. A. Orlikovsky, Institute of Physics and Technology (Russia)
A. E. Rogozhin, Institute of Physics and Technology (Russia)
A. G. Vasiliev, Institute of Physics and Technology (Russia)
Pulsar Science and Production Enterprise (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

© SPIE. Terms of Use
Back to Top