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Proceedings Paper

Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth
Author(s): Arsham Yeremyan; Hovsep Avetisyan; Karapet Avjyan; Gevorg Vardanyan; Ashot Khachatryan
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Paper Abstract

Using the pulsed laser deposition (PLD) technique CdTe layers were obtained on various substrates from the target of compound material, as well as by sequential deposition from single sources of Cd and Te. Electron diffraction analyses have shown that layers deposited from single targets on InSb, KBr substrates crystallize in usual cubic zinc-blende structure of CdTe at the growth temperature of ~150 °C, i.e. significantly lower than in other traditional techniques - MBE, MOCVD, PVD. Layers deposited from CdTe compound target on mica substrates crystallize with hexagonal wurtzite structure; and the single-crystalline growth of layers is observed at 300 °C. It was established that significant decrease (down to 170 °C) in monocrystalline growth temperature for CdTe can be achieved in this case by deposition of initial submonolayer bismuth on mica substrate; the subsequent CdTe layer crystallizes in wurtzite structure with the plane lattice parameter close to that of the bismuth (4.546 Å). Lattice-matched multilayer structures CdTe-Bi-CdTe--- were fabricated based on this technique. The observed peculiarities of dependence of layer structure on the intensity of evaporating laser and substrate temperature is related to the energy state of laser-ablated material plasma and its influence on orienting properties of substrate surface.

Paper Details

Date Published: 29 April 2008
PDF: 6 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250R (29 April 2008); doi: 10.1117/12.802417
Show Author Affiliations
Arsham Yeremyan, Institute of Radiophysics and Electronics (Armenia)
Hovsep Avetisyan, Institute of Radiophysics and Electronics (Armenia)
Karapet Avjyan, Institute of Radiophysics and Electronics (Armenia)
Gevorg Vardanyan, Institute of Radiophysics and Electronics (Armenia)
Ashot Khachatryan, Institute of Radiophysics and Electronics (Armenia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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