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Proceedings Paper

Langmuir probe applications in monitoring of plasma etching
Author(s): Andrey V. Miakonkikh; Konstantin V. Rudenko; Alexander A. Orlikovsky
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Paper Abstract

The purpose of the paper is to investigate the measurable variations in chemistry of SF6/O2/Ar plasma due to etching through layers interface of structure poly-Si/SiO2/Si. The noticeable magnitude and sufficient stability in some single parameters deference make it possible to develop application of Langmuir probe as implementation of a simple end-point-detection technique. The proposed method is based on the established idea that the surface reactions involved to the process of etching lead to dramatic changes in some parameters of the charged plasma species during the process. Particularly it was found that the densities of electrons and ions and the electron temperature are affected. It was shown that effective electron temperature and electron energy distribution function of the reactive gaseous mixture differ greatly from those of Ar plasma under the same excitation conditions. An approach to wafer-surface charging minimization by varying excitation settings and EEDF was proposed.

Paper Details

Date Published: 29 April 2008
PDF: 10 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250F (29 April 2008); doi: 10.1117/12.802362
Show Author Affiliations
Andrey V. Miakonkikh, Institute of Physics and Technology (Russia)
Konstantin V. Rudenko, Institute of Physics and Technology (Russia)
Alexander A. Orlikovsky, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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