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Proceedings Paper

Focused ion beam source of a new type for micro- and nanoelectronics technologies
Author(s): V. L. Varentsov
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Paper Abstract

A focused ion beam source of a new type is suggested for the first time. The original design of this source is based on the using of both a laser ablation and an advanced ion beam buffer gas cooling technique. Operation of the new ion beam source has been studied by means of computer experiments. For this purpose, detailed gas dynamic simulations based on the solution of a full system of time-dependent Navier-Stokes equations have been performed for both a conical supersonic nozzle having an inner tube on the axis and a novel RF-funnel extraction system. The results of gas dynamic calculations were used for detailed microscopic Monte Carlo ion-beam trajectory simulations under the combined effect of the buffer gas flow and electric fields of the RF-funnel. The obtained results made it apparent that the suggested ion beam source looks very promising for the use in the micro- and nanoelectronics technologies.

Paper Details

Date Published: 29 April 2008
PDF: 12 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702509 (29 April 2008); doi: 10.1117/12.802356
Show Author Affiliations
V. L. Varentsov, V.G. Khlopin Radium Institute (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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