Share Email Print
cover

Proceedings Paper

Mask image formation by electron beam deposition from vapor phase
Author(s): M. A. Bruk; E. N. Zhikharev; S. L. Shevchuk; I. A. Volegova; A. V. Spirin; E. N. Teleshov; V. A. Kalnov; Yu. P. Maishev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Dry resistless process was studied of mask image formation by electron beam deposition from hydrocarbon precursor undecane (C11H24) on substrates of SiO2 (layer 80 nm) on silicon and cupper (layer 430 nm) on silicon. A mask in form of grating of 5-150 nm height strips was created in a cell introduced into the scanning electron microscope CamScan. Strips thickness δ was considerably more than the beam size and depended on substrate material: for SiO2 δ=0.6 μm, for Cuδ=2 μm. Strong dependence of growth rate V (at Cu) on the line scan time τ was found out. At beam current 1.0 nA varying τ from 20 ms to 13 s led to 7.4 times decreasing V. This effect most likely is caused by significant diffusion delays at τ=13 s in precursor transport into reaction zone during the pixel time. The ion beam etching of substrates through the deposited mask was carried out. SiO2 substrate was etched by SF6 ions, Cu substrate was etched by Ar ions. In both cases etching rate of mask material were close to etching rate of substrate. In mask deposited on SiO2 thin (about 1 nm) intermediate surface layer was found having significantly more (8-10 times) etching resistance than the basic mask material.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702508 (29 April 2008); doi: 10.1117/12.802355
Show Author Affiliations
M. A. Bruk, Karpov Institute of Physical Chemistry (Russia)
E. N. Zhikharev, Institute of Physics and Technology (Russia)
S. L. Shevchuk, Institute of Physics and Technology (Russia)
I. A. Volegova, Karpov Institute of Physical Chemistry (Russia)
A. V. Spirin, Karpov Institute of Physical Chemistry (Russia)
E. N. Teleshov, Karpov Institute of Physical Chemistry (Russia)
V. A. Kalnov, Institute of Physics and Technology (Russia)
Yu. P. Maishev, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

© SPIE. Terms of Use
Back to Top