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Proceedings Paper

Correction of the EUV mirror substrate shape by ion beam
Author(s): N. Chkhalo; L. Paramonov; A. Pestov; D. Raskin; N. Salashchenko
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Paper Abstract

In the paper first results of study of etching speed and RMS roughnesses depending on an incidence angle and energy of ions for Si and Cr/Sc materials are presented. Possibility of variation in parameters of etching process (the incidence angle, energy of ions and exposition time) allows to pick up the optimum mode providing high speed etching or the minimal development of a roughness of a surface.

Paper Details

Date Published: 29 April 2008
PDF: 4 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702503 (29 April 2008); doi: 10.1117/12.802349
Show Author Affiliations
N. Chkhalo, Institute for Physics of Microstructures (Russia)
L. Paramonov, Institute for Physics of Microstructures (Russia)
A. Pestov, Institute for Physics of Microstructures (Russia)
D. Raskin, Institute for Physics of Microstructures (Russia)
N. Salashchenko, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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