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Proceedings Paper

Multilayer Zr/Si filters for EUV lithography and for radiation source metrology
Author(s): M. S. Bibishkin; N. I. Chkhalo; S. A. Gusev; E. B. Kluenkov; A. Ya. Lopatin; V. I. Luchin; A. E. Pestov; N. N. Salashchenko; L. A. Shmaenok; N. N. Tsybin; S. Yu. Zuev
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Paper Abstract

The technique for fabrication of thin film filters with high mechanical strength, capable of withstanding the prolonged heat load of 1 W/cm2, has been developed. Freestanding multilayer Zr/Si filters of size 20×150 mm2 with high transparency of 76% at wavelength λ = 13 nm were manufactured for EUV lithography tool. We have also developed and fabricated various designs of filters (freestanding or mesh supported) with lower transparency of 40-50% for experiments with intensive EUV sources. The tests of differential pressure withstandability and heat-resistance of filter samples were fulfilled. In order to model the influence on the filter of intensive radiation of the lithography source we have tested Zr/Si film samples by the Joule heating in vacuum at residual pressure of 10-8 Torr. The testing consisted in continuous heating of Zr/Si films at the electrical power per area unit from 0.5 W/cm2 to 6 W/cm2 during long period of time (up to 2 months). The influence of the long-term heat load on the transparency of samples at λ = 13 nm and within wavelength region 0.3 - 2 μm was investigated.

Paper Details

Date Published: 29 April 2008
PDF: 10 pages
Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702502 (29 April 2008); doi: 10.1117/12.802347
Show Author Affiliations
M. S. Bibishkin, Institute for Physics of Microstructures (Russia)
N. I. Chkhalo, Institute for Physics of Microstructures (Russia)
S. A. Gusev, Institute for Physics of Microstructures (Russia)
E. B. Kluenkov, Institute for Physics of Microstructures (Russia)
A. Ya. Lopatin, Institute for Physics of Microstructures (Russia)
V. I. Luchin, Institute for Physics of Microstructures (Russia)
A. E. Pestov, Institute for Physics of Microstructures (Russia)
N. N. Salashchenko, Institute for Physics of Microstructures (Russia)
L. A. Shmaenok, PhysTech (Netherlands)
N. N. Tsybin, Institute for Physics of Microstructures (Russia)
S. Yu. Zuev, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 7025:
Micro- and Nanoelectronics 2007

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